MCR716 mcr718 surface mount silicon controlled rectifier 4 amp, 400 thru 600 volts description: the central semiconductor MCR716 and mcr718 are epoxy molded silicon controlled rectifiers designed for sensing circuit applications and control systems. marking: full part number dpak thyristor case maximum ratings: (t c =25c unless otherwise noted) symbol MCR716 mcr718 units peak repetitive off-state voltage v drm, v rrm 400 600 v rms on-state current (t c =85c) i t(rms) 4.0 a peak non-repetitive surge current (1/2 cycle sine wave, 50hz/60hz) i tsm 15 a i 2 t value for fusing, t=10ms i 2 t 1.1 a 2 s peak gate power, tp=1.0s p gm 0.5 w average gate power dissipation p g (av) 0.1 w peak gate current, tp=1.0s i gm 0.2 a critical rate of rise of on-state current di/dt 50 a/s storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm, r gk =1.0k 10 a i drm, i rrm rated v drm, v rrm, r gk =1.0k , t c =125c 200 a i gt v d =12v, r l =10 1.0 38 75 a i h i t =50ma, r gk =1.0k 0.25 2.0 ma v gt v d =12v, r l =10 0.55 0.8 v v tm i tm =8.0a, tp=380s 1.6 1.8 v dv/dt v d = 2 / 3 v drm, r gk =1.0k , t c =125c 10 v/s r1 (1-march 2010) www.centralsemi.com
MCR716 mcr718 surface mount silicon controlled rectifier 4 amp, 400 thru 600 volts lead code: 1) cathode 2) anode 3) gate 4) anode marking: full part number dpak thyristor case - mechanical outline www.centralsemi.com r1 (1-march 2010)
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